BANSEN Roman
PostDoc position @IKZ
Short Bio
Roman Bansen obtained his Bachelor (B.Sc.) and Master (M.Sc.) degrees in Physics from Humboldt University Berlin, Germany, with intermittent studies abroad at the Chinese University of Hong Kong. For his master’s thesis, he conducted research on Ge nanowire growth by molecular beam epitaxy (MBE).
From 2011 on, he pursued his doctoral research on solution growth of polycrystalline Si on glass, using Sn and In as solvents, at the Leibniz Institute for Crystal Growth (IKZ). After an intermediate study semester abroad at Shenzhen University, China, he continued his doctoral studies at IKZ in 2014 and became part of the CHEETAH project, where he focusses on the deposition of Si from metallic solutions by steady-state liquid phase expitaxy (SSLPE).
Since his graduation in 2016, he works as a postdoctoral researcher at IKZ and coordinates the work within work-package 6 (WP6) for the SSLPE deposition of Si on reorganized porous Si epifoils provided by IMEC, Belgium